White-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuits
Ang, Diing Shenp
Yew, Kwang Sing
Bera, Milan Kumar
Date of Issue2015
School of Electrical and Electronic Engineering
The formation of nanoscale percolation paths or conducting filaments in oxide materials such as SiO2, HfO2, etc. presents both a challenge to gate oxide reliability as well as an opportunity to a next-generation resistive memory technology, as these materials have already been heavily deployed in mainstream integrated circuit manufacturing. In this paper, we present novel experimental evidence showing that electrical conduction through a nanoscale conducting filament can be disrupted upon illumination by white light. The disruption is either permanent or temporary, depending on the current which passed through the filament at the instant of its formation before the process was interrupted. The underlying mechanism is believed to involve photon-induced migration of neighboring interstitial oxygen ions, leading to their recombination with the vacancy sites which made up the conducting filament. This finding suggests possible exploitation for gate oxide reliability renewal and implementation of optical functions in SiO2 or HfO2 based devices whose functionality thus far is only limited to electrical excitation.
© 2015 The Electrochemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by ECS Transactions, The Electrochemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1149/06905.0169ecst].