dc.contributor.authorAng, Diing Shenp
dc.contributor.authorKawashima, Tomohito
dc.contributor.authorZhou, Yu
dc.contributor.authorYew, Kwang Sing
dc.contributor.authorBera, Milan Kumar
dc.contributor.authorZhang, Haizhong
dc.date.accessioned2018-07-23T09:06:38Z
dc.date.available2018-07-23T09:06:38Z
dc.date.issued2015
dc.identifier.citationAng, D. S., Kawashima, T., Zhou, Y., Yew, K. S., Bera, M. K., & Zhang, H. (2015). White-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuits. ECS Transactions, 69(5), 169-181.en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://hdl.handle.net/10220/45197
dc.description.abstractThe formation of nanoscale percolation paths or conducting filaments in oxide materials such as SiO2, HfO2, etc. presents both a challenge to gate oxide reliability as well as an opportunity to a next-generation resistive memory technology, as these materials have already been heavily deployed in mainstream integrated circuit manufacturing. In this paper, we present novel experimental evidence showing that electrical conduction through a nanoscale conducting filament can be disrupted upon illumination by white light. The disruption is either permanent or temporary, depending on the current which passed through the filament at the instant of its formation before the process was interrupted. The underlying mechanism is believed to involve photon-induced migration of neighboring interstitial oxygen ions, leading to their recombination with the vacancy sites which made up the conducting filament. This finding suggests possible exploitation for gate oxide reliability renewal and implementation of optical functions in SiO2 or HfO2 based devices whose functionality thus far is only limited to electrical excitation.en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.format.extent13 p.
dc.language.isoenen_US
dc.relation.ispartofseriesECS Transactionsen_US
dc.rights© 2015 The Electrochemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by ECS Transactions, The Electrochemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1149/06905.0169ecst].en_US
dc.subjectPercolation Pathen_US
dc.subjectOxideen_US
dc.titleWhite-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuitsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1149/06905.0169ecst
dc.description.versionAccepted version


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