Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/86847
Title: New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing
Authors: Boo, Ann Ann
Tung, Zhi Yan
Ang, Diing Shenp
Keywords: Bias-temperature Instability
High-k Gate Dielectric
Issue Date: 2016
Source: Boo, A. A., Tung, Z. Y., & Ang, D. S. (2016). New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing. IEEE Electron Device Letters, 37(4), 369-372.
Series/Report no.: IEEE Electron Device Letters
Abstract: New observations on the correlation between the recoverable-to-permanent transformation of hole trapping and the generation of stress-induced leakage current (SILC) under negative-bias temperature stressing are presented. Both effects are shown to exhibit very similar temperature dependence, activation energies, and power-law time exponents. In addition, a corner temperature (~125 °C), which marks an increase in the activation energy from the high-to-low temperature regime, is revealed in both the trapped-hole transformation and the SILC generation, further highlighting the strongly correlated behaviors of the two effects. These findings corroborate an earlier hypothesis that both phenomena share a common degradation mechanism.
URI: https://hdl.handle.net/10356/86847
http://hdl.handle.net/10220/45200
ISSN: 0741-3106
DOI: 10.1109/LED.2016.2531752
Rights: © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/LED.2016.2531752].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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