Monolithic integration of Si-CMOS and III-V-on-Si through direct wafer bonding process
Lee, Kwang Hong
Sasangka, Wardhana Aji
Goh, Shuh Chin
Lee, Kenneth E.
Fitzgerald, Eugene A.
Tan, Chuan Seng
Date of Issue2017
School of Electrical and Electronic Engineering
Integration of silicon-complementary metal oxide-semiconductor (Si-CMOS) and III-V compound semiconductors (with device structures of either InGaAs HEMT, AlGaInP LED, GaN HEMT, or InGaN LED) on a common Si substrate is demonstrated. The Si-CMOS layer is temporarily bonded on a Si handle wafer. Another III-V/Si substrate is then bonded to the Si-CMOS containing handle wafer. Finally, the handle wafer is released to realize the Si-CMOS on III-V/Si substrate. For GaN HEMT or LED on Si substrate, additional wafer bonding step is required to replace the fragile Si (111) substrate after high temperature GaN growth with a new Si (001) wafer to improve the robustness of the GaN/Si wafers. Through this substrate replacement step, the bonded wafer pair can survive the subsequent processing steps. The monolithic integration of Si-CMOS + III-V devices on a common Si platform enables new generation of systems with more functionality, better energy efficiency, and smaller form factor.
IEEE Journal of the Electron Devices Society
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