dc.contributor.authorTay, Roland Yingjie
dc.contributor.authorLi, Hongling
dc.contributor.authorTsang, Siu Hon
dc.contributor.authorZhu, Minmin
dc.contributor.authorLoeblein, Manuela
dc.contributor.authorJing, Lin
dc.contributor.authorLeong, Fei Ni
dc.contributor.authorTeo, Edwin Hang Tong
dc.identifier.citationTay, R. Y., Li, H., Tsang, S. H., Zhu, M., Loeblein, M., Jing, L., et al. (2016). Trimethylamine borane: a new single-source precursor for monolayer h-BN single crystals and h-BCN thin films. Chemistry of Materials, 28(7), 2180-2190.en_US
dc.description.abstractDue to their exceptional chemical and thermal stabilities as well as electrically insulating property, atomically thin hexagonal boron nitride (h-BN) films have been identified as a promising class of dielectric substrate and encapsulation material for high-performance two-dimensional (2D) heterostructure devices. Herein, we report a facile chemical vapor deposition synthesis of large-area atomically thin h-BN including monolayer single crystals and C-doped h-BN (h-BCN) films utilizing a relatively low-cost, commercially available trimethylamine borane (TMAB) as a single-source precursor. Importantly, pristine 2D h-BN films with a wide band gap of ∼6.1 eV can be achieved by limiting the sublimation temperature of TMAB at 40 °C, while C dopants are introduced to the h-BN films when the sublimation temperature is further increased. The h-BCN thin films displayed band gap narrowing effects as identified by an additional shoulder at 205 nm observed in their absorbance spectra. Presence of N–C bonds in the h-BCN structures with a doping concentration of ∼2 to 5% is confirmed by X-ray photoelectron spectroscopy. The inclusion of low C doping in the h-BN films is expected to result in constructive enhancement to its mechanical properties without significant alteration to its electrically insulating nature. This study provides new insights into the design and fabrication of large-area atomically thin h-BN/h-BCN films toward practical applications and suggests that the range of precursors can be potentially extended to other anime borane complexes as well.en_US
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.relation.ispartofseriesChemistry of Materialsen_US
dc.rights© 2016 American Chemical Society.en_US
dc.subjectBoron Nitrideen_US
dc.subjectChemical Vapor Depositionen_US
dc.titleTrimethylamine borane: a new single-source precursor for monolayer h-BN single crystals and h-BCN thin filmsen_US
dc.typeJournal Article
dc.contributor.researchCNRS International NTU THALES Research Alliancesen_US
dc.contributor.researchTemasek Laboratoriesen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US

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