Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/86216
Title: Plasmonic enhancement of electroluminescence
Authors: Demir, Hilmi Volkan
Guzatov, D. V.
Gaponenko, S. V.
Keywords: Plasmonic Enhancement
Electroluminescence
Issue Date: 2018
Source: Guzatov, D. V., Gaponenko, S. V., & Demir, H. V. (2018). Plasmonic enhancement of electroluminescence. AIP Advances, 8(1), 015324-.
Series/Report no.: AIP Advances
Abstract: Here plasmonic effect specifically on electroluminescence (EL) is studied in terms of radiative and nonradiative decay rates for a dipole near a metal spherical nanoparticle (NP). Contribution from scattering is taken into account and is shown to play a decisive role in EL enhancement owing to pronounced size-dependent radiative decay enhancement and weak size effect on non-radiative counterpart. Unlike photoluminescence where local incident field factor mainly determines the enhancement possibility and level, EL enhancement is only possible by means of quantum yield rise, EL enhancement being feasible only for an intrinsic quantum yield Q0 < 1. The resulting plasmonic effect is independent of intrinsic emitter lifetime but is exclusively defined by the value of Q0, emission spectrum, NP diameter and emitter-metal spacing. For 0.1< Q0 < 0.25, Ag nanoparticles are shown to enhance LED/OLED intensity by several times over the whole visible whereas Au particles feature lower effect within the red-orange range only. Independently of positive effect on quantum yield, metal nanoparticles embedded in an electroluminescent device will improve its efficiency at high currents owing to enhanced overall recombination rate which will diminish manifestation of Auger processes. The latter are believed to be responsible for the known undesirable efficiency droop in semiconductor commercial quantum well based LEDs at higher current. For the same reason plasmonics can diminish quantum dot photodegradation from Auger process induced non-radiative recombination and photoionization thus opening a way to avoid negative Auger effects in emerging colloidal semiconductor LEDs.
URI: https://hdl.handle.net/10356/86216
http://hdl.handle.net/10220/45273
ISSN: 2158-3226
DOI: http://dx.doi.org/10.1063/1.5019778
Rights: © 2018 The Author(s) (published by American Institute of Physics). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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