dc.contributor.authorDu, Wenhan
dc.contributor.authorWang, Bing
dc.contributor.authorYang, Jingjing
dc.contributor.authorZhang, Keke
dc.contributor.authorZhao, Yu
dc.contributor.authorXiong, Chao
dc.contributor.authorMa, Jinxiang
dc.contributor.authorChen, Lei
dc.contributor.authorZhu, Xifang
dc.date.accessioned2018-07-27T02:21:52Z
dc.date.available2018-07-27T02:21:52Z
dc.date.issued2017
dc.identifier.citationDu, W., Wang, B., Yang, J., Zhang, K., Zhao, Y., Xiong, C., et al. (2017). Tip-induced band bending on Sr/Si(100)-2×3 reconstructed surface. AIP Advances, 7(12), 125124-.en_US
dc.identifier.issn2158-3226en_US
dc.identifier.urihttp://hdl.handle.net/10220/45283
dc.description.abstractUsing Vary-temperature Scanning Tunnelling Microscopy (VT-STM), the geometric and electronic structures of technological important Sr/Si(100)-2×3 surface were investigated. Two important findings explained in this research. First, a phenomenon similar to quantum corral observed in the empty state STM image that near the bottom of the conduction band. This is aroused from the surface vacancies and phase boundary in the Sr/Si(100)-2×3 surface. And a new Sr/Si(100)-2×6 reconstructed structure coexist with Sr/Si(100)-2×3 surface has been prepared by accurately controlling the annealing temperature, both surface’s geometric structures can be described by dimer vacancy model. Second, tip-induced band bending phenomenon was observed in the Sr/Si(100)-2×3 surface at substrate temperature range from 76K to 300K. Experimental LDOS results from n and p-type silicon substrate confirms 0.3eV up the motion of the valence band minimum compare with bare Si(100)-2×1 surface. Buckled and unbuckled silicon dimer coexisting in the Sr/Si(100)-2×3 reconstructed surface contribute to the tip-induced band bending and energy band gap widen phenomenon. Which confirms that Sr atoms transfer electrons to the nearby silicon dimers, make the first layer silicon dimers kept at unbuckled state.en_US
dc.format.extent6 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesAIP Advancesen_US
dc.rights© 2017 The Author(s) (published by American Institute of Physics). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en_US
dc.subjectVary-temperature Scanning Tunnelling Microscopy (VT-STM)en_US
dc.subjectTip-induced Band Bendingen_US
dc.titleTip-induced band bending on Sr/Si(100)-2×3 reconstructed surfaceen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.4998918
dc.description.versionPublished versionen_US


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