Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/87030
Title: Ultra-confined surface phonon polaritons in molecular layers of van der Waals dielectrics
Authors: Dubrovkin, Alexander M.
Qiang, Bo
Krishnamoorthy, Harish Natarajan Swaha
Zheludev, Nikolay I.
Wang, Qi Jie
Keywords: Dielectrics
Phonon
Issue Date: 2018
Source: Dubrovkin, A. M., Qiang, B., Krishnamoorthy, H. N. S., Zheludev, N. I., & Wang, Q. J. (2018). Ultra-confined surface phonon polaritons in molecular layers of van der Waals dielectrics. Nature Communications, 9(1), 1762-.
Project: NRF–CRP19–2017–01
NRF-CRP18-2017-02
MOE2016-T3-1-006
Journal: Nature Communications
Series/Report no.: Nature Communications
Abstract: Improvements in device density in photonic circuits can only be achieved with interconnects exploiting highly confined states of light. Recently this has brought interest to highly confined plasmon and phonon polaritons. While plasmonic structures have been extensively studied, the ultimate limits of phonon polariton squeezing, in particular enabling the confinement (the ratio between the excitation and polariton wavelengths) exceeding 102, is yet to be explored. Here, exploiting unique structure of 2D materials, we report for the first time that atomically thin van der Waals dielectrics (e.g., transition-metal dichalcogenides) on silicon carbide substrate demonstrate experimentally record-breaking propagating phonon polaritons confinement resulting in 190-times squeezed surface waves. The strongly dispersive confinement can be potentially tuned to greater than 103 near the phonon resonance of the substrate, and it scales with number of van der Waals layers. We argue that our findings are a substantial step towards infrared ultra-compact phonon polaritonic circuits and resonators, and would stimulate further investigations on nanophotonics in non-plasmonic atomically thin interface platforms.
URI: https://hdl.handle.net/10356/87030
http://hdl.handle.net/10220/45291
ISSN: 2041-1723
DOI: 10.1038/s41467-018-04168-x
Schools: School of Electrical and Electronic Engineering 
School of Physical and Mathematical Sciences 
Rights: © 2018 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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