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Title: Quantitative strain analysis of InAs/GaAs quantum dot materials
Authors: Vullum, Per Erik
Nord, Magnus
Vatanparast, Maryam
Thomassen, Sedsel Fretheim
Boothroyd, Chris
Holmestad, Randi
Fimland, Bjørn-Ove
Reenaas, Turid Worren
Keywords: Quantum Dots
Quantitative Strain Analysis
Issue Date: 2017
Source: Vullum, P. E., Nord, M., Vatanparast, M., Thomassen, S. F., Boothroyd, C., Holmestad, R., . . . Reenaas, T. W. (2017). Quantitative strain analysis of InAs/GaAs quantum dot materials. Scientific Reports, 7, 45376-. doi:10.1038/srep45376
Series/Report no.: Scientific Reports
Abstract: Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattice in a wide region that extends several nm into the GaAs spacer layer below and above the QDs. Finally, we show how V-shaped dislocations originating at the QD/GaAs interface efficiently remove most of the lattice mismatch induced tetragonal distortions in and around the QD.
ISSN: 2045-2322
DOI: 10.1038/srep45376
Rights: © 2017 The Author(s). This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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