dc.contributor.authorClark, Antony H.
dc.contributor.authorMacaluso, Roberto
dc.contributor.authorCalvez, Stephane
dc.contributor.authorLaurand, N.
dc.contributor.authorSun, Handong
dc.contributor.authorDawson, M. D.
dc.contributor.authorJouhti, Tomi
dc.contributor.authorKontinnen, Janne
dc.contributor.authorMarkus, Pessa
dc.date.accessioned2009-04-17T11:38:13Z
dc.date.available2009-04-17T11:38:13Z
dc.date.copyright2004en_US
dc.date.issued2004
dc.identifier.citationClark, A. H., Macaluso, R., Calvez, S., Laurand, N., Sun, H. D., Dawson, M. D., et al. (2004). Long-wavelength monolithic gaInNAs vertical-cavity optical amplifiers. IEEE Journal of Quantum Electronics, 40(7), 878-883.en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://hdl.handle.net/10220/4564
dc.description.abstractWe report on the continuous-wave amplification characteristics of an optically pumped 1.3-μm multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented and demonstration of 9 dB of chip gain obtained over 9.5 nm with an optical bandwidth of 12 GHz is reported.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesIEEE Journal of Quantum Electronics.en_US
dc.rights© 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.subjectDRNTU::Science::Physics::Optics and light
dc.titleLong-wavelength monolithic gaInNAs vertical-cavity optical amplifiersen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.description.versionPublished versionen_US


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