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Title: Modification and control of topological insulator surface states using surface disorder
Authors: Sacksteder, Vincent
Ohtsuki, Tomi
Kobayashi, Koji
Keywords: Topological Insulator
Surface Disorder
Issue Date: 2015
Source: Sacksteder, V., Ohtsuki, T., & Kobayashi, K. (2015). Modification and control of topological insulator surface states using surface disorder. Physical Review Applied, 3(6), 064006-. doi:10.1103/PhysRevApplied.3.064006
Series/Report no.: Physical Review Applied
Abstract: We numerically demonstrate a practical means of systematically controlling topological transport on the surface of a three-dimensional topological insulator, by introducing strong disorder in a layer of depth d extending inward from the surface of the topological insulator. The dependence on d of the density of states, conductance, scattering time, scattering length, diffusion constant, and mean Fermi velocity are investigated. The proposed control via disorder depth d requires that the disorder strength be near the large value which is necessary to drive the topological insulator into the nontopological phase. If d is patterned using masks, gates, ion implantation, etc., then integrated circuits may be fabricated. This technique will be useful for experiments and for device engineering.
DOI: 10.1103/PhysRevApplied.3.064006
Rights: © 2015 American Physical Society. This paper was published in Physical Review Applied and is made available as an electronic reprint (preprint) with permission of American Physical Society. The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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