Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/89070
Title: 3D imaging and manipulation of subsurface selenium vacancies in PdSe 2
Authors: Nguyen, Giang D.
Liang, Liangbo
Zou, Qiang
Fu, Mingming
Oyedele, Akinola D.
Sumpter, Bobby G.
Liu, Zheng
Gai, Zheng
Xiao, Kai
Li, An-Ping
Keywords: DRNTU::Engineering::Materials
3D Imaging
PdSe2
Issue Date: 2018
Source: Nguyen, G. D., Liang, L., Zou, Q., Fu, M., Oyedele, A. D., Sumpter, B. G., . . . Li, A.-P. (2018). 3D imaging and manipulation of subsurface selenium vacancies in PdSe2. Physical Review Letters, 121(8), 086101-. doi:10.1103/PhysRevLett.121.086101
Series/Report no.: Physical Review Letters
Abstract: Two-dimensional materials such as layered transition-metal dichalcogenides (TMDs) are ideal platforms for studying defect behaviors, an essential step towards defect engineering for novel material functions. Here, we image the 3D lattice locations of selenium-vacancy VSe defects and manipulate them using a scanning tunneling microscope (STM) near the surface of PdSe2, a recently discovered pentagonal layered TMD. The VSe show a characterisitc charging ring in a spatially resolved conductance map, based on which we can determine its subsurface lattice location precisely. Using the STM tip, not only can we reversibly switch the defect states between charge neutral and charge negative, but also trigger migrations of VSe defects. This allows a demonstration of direct “writing” and “erasing” of atomic defects and tracing the diffusion pathways. First-principles calculations reveal a small diffusion barrier of VSe in PdSe2, which is much lower than S vacancy in MoS2 or an O vacancy in TiO2. This finding opens an opportunity of defect engineering in PdSe2 for such as controlled phase transformations and resistive-switching memory device application.
URI: https://hdl.handle.net/10356/89070
http://hdl.handle.net/10220/46084
ISSN: 0031-9007
DOI: http://dx.doi.org/10.1103/PhysRevLett.121.086101
Rights: © 2018 American Physical Society. This paper was published in Physical Review Letters and is made available as an electronic reprint (preprint) with permission of American Physical Society. The published version is available at: [http://dx.doi.org/10.1103/PhysRevLett.121.086101]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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