Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/89237
Title: Phase-change-driven dielectric-plasmonic transitions in chalcogenide metasurfaces
Authors: Gholipour, Behrad
Karvounis, Artemios
Yin, Jun
Soci, Cesare
MacDonald, Kevin F.
Zheludev, Nikolay I.
Keywords: Chalcogenide
DRNTU::Science::Physics
Plasmonics
Issue Date: 2018
Source: Gholipour, B., Karvounis, A., Yin, J., Soci, C., MacDonald, K. F., & Zheludev, N. I. (2018). Phase-change-driven dielectric-plasmonic transitions in chalcogenide metasurfaces. NPG Asia Materials, 10(6), 533-539. doi:10.1038/s41427-018-0043-4
Series/Report no.: NPG Asia Materials
Abstract: Chalcogenides—alloys based on group-16 ‘chalcogen’ elements (sulfur, selenium, and tellurium) covalently bound to ‘network formers’ such as arsenic, germanium, antimony, and gallium—have a variety of technologically useful properties, including infrared transparency, high optical nonlinearity, photorefractivity and readily induced, reversible, non-volatile structural phase switching. Such phase-change materials are of enormous interest in the fields of plasmonics and nanophotonics. However, in such applications, the fact that some chalcogenides accrue plasmonic properties in the transition from an amorphous to a crystalline state, i.e., the real part of their relative permittivity becomes negative, has gone somewhat unnoticed. Indeed, one of the most commercially important chalcogenide compounds, germanium antimony telluride (Ge2:Sb2:Te5 or GST), which is widely used in rewritable optical and electronic data storage technologies, presents this behavior at wavelengths in the near-ultraviolet to visible spectral range. In this work, we show that the phase transition-induced emergence of plasmonic properties in the crystalline state can markedly change the optical properties of sub-wavelength-thickness, nanostructured GST films, allowing for the realization of non-volatile, reconfigurable (e.g., color-tunable) chalcogenide metasurfaces operating at visible frequencies and creating opportunities for developments in non-volatile optical memory, solid state displays and all-optical switching devices.
URI: https://hdl.handle.net/10356/89237
http://hdl.handle.net/10220/46139
DOI: 10.1038/s41427-018-0043-4
Rights: © 2018 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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