dc.contributor.authorJiang, Chongyun
dc.contributor.authorXu, Weigao
dc.contributor.authorRasmita, Abdullah
dc.contributor.authorHuang, Zumeng
dc.contributor.authorLi, Ke
dc.contributor.authorXiong, Qihua
dc.contributor.authorGao, Wei-bo
dc.identifier.citationJiang, C., Xu, W., Rasmita, A., Huang, Z., Li, K., Xiong, Q., & Gao, W. (2018). Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures. Nature Communications, 9(1), 753-. doi: 10.1038/s41467-018-03174-3en_US
dc.description.abstractTransition metal dichalcogenides have valley degree of freedom, which features optical selection rule and spin-valley locking, making them promising for valleytronics devices and quantum computation. For either application, a long valley polarization lifetime is crucial. Previous results showed that it is around picosecond in monolayer excitons, nanosecond for local excitons and tens of nanosecond for interlayer excitons. Here we show that the dark excitons in two-dimensional heterostructures provide a microsecond valley polarization memory thanks to the magnetic field induced suppression of valley mixing. The lifetime of the dark excitons shows magnetic field and temperature dependence. The long lifetime and valley polarization lifetime of the dark exciton in two-dimensional heterostructures make them promising for long-distance exciton transport and macroscopic quantum state generations.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.format.extent8 p.en_US
dc.relation.ispartofseriesNature Communicationsen_US
dc.rights© 2018 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.en_US
dc.titleMicrosecond dark-exciton valley polarization memory in two-dimensional heterostructuresen_US
dc.typeJournal Article
dc.contributor.researchThe Photonics Instituteen_US
dc.contributor.researchCentre for Disruptive Photonic Technologiesen_US
dc.contributor.researchNanoelectronics Center of Excellenceen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.description.versionPublished versionen_US
dc.contributor.organizationMajuLab, CNRS-UCA-SU-NUS-NTU International Joint Research Unit UMI 3654en_US

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