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Title: CMOS low noise amplifier design for microwave and mmWave applications
Authors: Li, Xue Jun
Zhang, Yue Ping
Keywords: Low Noise Amplifier
Complementary Metal Oxide Semiconductor
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Li, X. J., & Zhang, Y. P. (2018). CMOS low noise amplifier design for microwave and mmWave applications. Progress In Electromagnetics Research, 161, 57-85. doi:10.2528/PIER18012410
Series/Report no.: Progress In Electromagnetics Research
Abstract: This paper reviews recent advances in the design of low noise amplifier (LNA) in complementary metal oxide semiconductor (CMOS) technology for radio transceivers at microwave and millimeter wave (mmWave) frequencies. First, the evolution of wireless communication systems and CMOS technology are briefly revisited to highlight the requirements of an LNA design. Then, key performance parameters and device circuit models are described. Next, we discuss typical LNA topologies, followed by those important design techniques, algorithms and concepts developed specifically for CMOS LNAs. Moreover, reported CMOS LNA designs are summarized, and future design issues are identified. Finally, we conclude the paper and briefly outline our future work on CMOS LNA designs.
ISSN: 1070-4698
DOI: 10.2528/PIER18012410
Rights: © 2018 EMW Publishing. This paper was published in Progress In Electromagnetics Research and is made available as an electronic reprint (preprint) with permission of EMW Publishing. The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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