dc.contributor.authorLiu, Juanjuan
dc.contributor.authorKutty, Rajendrannair Govindan
dc.contributor.authorLiu, Zheng
dc.identifier.citationLiu, J., Kutty, R. G., & Liu, Z. (2016). Controlled synthesis of atomically layered hexagonal boron nitride via chemical vapor deposition. Molecules, 21(12), 1636-. doi:10.3390/molecules21121636en_US
dc.description.abstractHexagonal boron nitrite (h-BN) is an attractive material for many applications including electronics as a complement to graphene, anti-oxidation coatings, light emitters, etc. However, the synthesis of high-quality h-BN is still a great challenge. In this work, via controlled chemical vapor deposition, we demonstrate the synthesis of h-BN films with a controlled thickness down to atomic layers. The quality of as-grown h-BN is confirmed by complementary characterizations including high-resolution transition electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray photo-electron spectroscopy. This work will pave the way for production of large-scale and high-quality h-BN and its applications as well.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.format.extent8 p.en_US
dc.rights© 2016 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/).en_US
dc.subjectChemical Vapor Depositionen_US
dc.subjectHexagonal Boron Nitrideen_US
dc.titleControlled synthesis of atomically layered hexagonal boron nitride via chemical vapor depositionen_US
dc.typeJournal Article
dc.contributor.researchCentre for Programmable Materialsen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.description.versionPublished versionen_US

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