Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/89585
Title: InPBi quantum dots for super-luminescence diodes
Authors: Zhang, Liyao
Song, Yuxin
Chen, Qimiao
Zhu, Zhongyunshen
Wang, Shumin
Keywords: DRNTU::Engineering::Electrical and electronic engineering
InPBi
Quantum Dot
Issue Date: 2018
Source: Zhang, L., Song, Y., Chen, Q., Zhu, Z., & Wang, S. (2018). InPBi Quantum Dots for Super-Luminescence Diodes. Nanomaterials, 8(9), 705-. doi:10.3390/nano8090705
Series/Report no.: Nanomaterials
Abstract: InPBi thin film has shown ultra-broad room temperature photoluminescence, which is promising for applications in super-luminescent diodes (SLDs) but met problems with low light emission efficiency. In this paper, InPBi quantum dot (QD) is proposed to serve as the active material for future InPBi SLDs. The quantum confinement for carriers and reduced spatial size of QD structure can improve light emission efficiently. We employ finite element method to simulate strain distribution inside QDs and use the result as input for calculating electronic properties. We systematically investigate different transitions involving carriers on the band edges and the deep levels as a function of Bi composition and InPBi QD geometry embedded in InAlAs lattice matched to InP. A flat QD shape with a moderate Bi content of a few percent over 3.2% would provide the optimal performance of SLDs with a bright and wide spectrum at a short center wavelength, promising for future optical coherence tomography applications.
URI: https://hdl.handle.net/10356/89585
http://hdl.handle.net/10220/46294
ISSN: 2079-4991
DOI: 10.3390/nano8090705
Rights: © 2018 by The Author(s). Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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