Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/89796
Title: A D-band amplifier in 65 nm bulk CMOS for short-distance data center communication
Authors: Huang, Qijun
Yu, Hao
Luo, Jiang
He, Jin
Feng, Guangyin
Apriyana, Alit
Fang, Ya
Xue, Zhe
Keywords: Millimeter-wave (mm-wave)
CMOS
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Luo, J., He, J., Feng, G., Apriyana, A., Fang, Y., Xue, Z., . . . Yu, H. (2018). A D-band amplifier in 65 nm bulk CMOS for short-distance data center communication. IEEE Access, 6, 53191-53200. doi:10.1109/ACCESS.2018.2871047
Series/Report no.: IEEE Access
Abstract: A novel pole-tuning technique with T-type network for interstage bandwidth extension is proposed in this paper. By exploiting the proposed technique in interstage of amplifiers, the transfer function of each stage exhibits two dominant poles, achieving a flat gain–frequency response over an ultrawide bandwidth. For verification, a four-stage amplifier based on the pole-tuning technique with T-type network has been designed and implemented in a 65-nm bulk CMOS technology. The fabricated prototype achieves a peak gain of 9.5 dB at 122 GHz with a 3-dB bandwidth of more than 26 GHz and a fractional bandwidth of larger than 21.3%, while consuming a dc power of 62 mW. At the operating frequency of 125 GHz, the saturation output power and the output P 1 dB are 8.6 and 4.6 dBm, respectively. The chip occupies a small silicon area of 0.27 mm 2 including all testing pads with a core size of only 0.105 mm 2 . The proposed amplifier is suitable for short-distance data center communication as one of the key building blocks.
URI: https://hdl.handle.net/10356/89796
http://hdl.handle.net/10220/46393
DOI: http://dx.doi.org/10.1109/ACCESS.2018.2871047
Rights: © 2018 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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