Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91145
Title: CMOS T/R switch design : towards ultra-wideband and higher frequency
Authors: Li, Qiang
Zhang, Yue Ping
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2007
Source: Li, Q., & Zhang, Y. P. (2007). CMOS T/R switch design : towards ultra-wideband and higher frequency. IEEE Journal of Solid-State Circuits, 42(3), 563-570.
Series/Report no.: IEEE journal of solid-state circuits
Abstract: This paper presents the comprehensive considerations of CMOS transmit/receive (T/R) switch design towards ultra-wideband and over 15-GHz frequencies. Techniques for minimizing parasitics and increasing linearity are discussed. A customized transistor layout is proposed for T/R switch design and its effects on insertion loss and isolation are studied. The analysis shows that a series-only architecture using the customized transistor layout achieves better insertion loss and reasonable isolation. A double-well body-floating technique is proposed and its effects are discussed. A differential switch architecture without shunt arms is designed and verified by experimental results. Fabricated in 0.13- m triple-well CMOS, the T/R switch exhibits less than 2 dB insertion loss and higher than 21 dB isolation up to 20 GHz. With resistive body floating and differential architecture, the high linearity is of ultra-wideband characteristic, more than 30-dBm power 1-dB compression point (P1dB) is obtained up to 20 GHz in only 0.03 mm2 active die area.
URI: https://hdl.handle.net/10356/91145
http://hdl.handle.net/10220/4646
ISSN: 0018-9200
DOI: http://dx.doi.org/10.1109/JSSC.2006.891442
Rights: © 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

Files in This Item:
File Description SizeFormat 
CMOS T-R switch design- towards ultrawide-band and higher frequency.pdfPublished version1.51 MBAdobe PDFThumbnail
View/Open

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.