Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/90974| Title: | Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current | Authors: | Phua, Poh Chin. Ong, Vincent K. S. |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2002 | Source: | Phua, P. C., & Ong, V. K. S. (2002). Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current. IEEE Transactions on Electron Devices, 49(11), 2036-2046. | Series/Report no.: | IEEE transactions on electron devices | Abstract: | This paper describes a new method of determining the location of a localized defect in semiconductor materials using the perpendicular p–n junction configuration. The scanning electron microscope (SEM) operating in the charge-collection, or the electron beam induced current (EBIC) mode, is used for this. This method is based on the model used to calculate the contrast of a localized defect as suggested by C. Donolato and is known as the contrast model. This model can be used to precisely extract the location of the localized defect and is unaffected by the value of the surface recombination velocity at the beam entrance surface. The model of the localized defect used in this paper is characterized by minority carriers with constant lifetimes that are lower than those in the bulk. An electron beam with an extended generation profile was used in a two-dimensional (2-D) device simulator, for the verification of the theory. | URI: | https://hdl.handle.net/10356/90974 http://hdl.handle.net/10220/4650 |
ISSN: | 0018-9383 | DOI: | 10.1109/TED.2002.804703 | Rights: | © 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Journal Articles |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| e location of localized defect in the perpendicular junction configuration with the use of electron beam induced current.pdf | Published version | 775.54 kB | Adobe PDF |  View/Open |
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.