Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current
Author
Phua, Poh Chin.
Ong, Vincent K. S.
Date of Issue
2002School
School of Electrical and Electronic Engineering
Version
Published version
Abstract
This paper describes a new method of determining the location of a localized defect in semiconductor materials using the perpendicular p–n junction configuration. The scanning electron
microscope (SEM) operating in the charge-collection, or the electron beam induced current (EBIC) mode, is used for this. This method is based on the model used to calculate the contrast of a localized defect as suggested by C. Donolato and is known as the contrast model. This model can be used to precisely extract the location of the localized defect and is unaffected by the value of the surface recombination velocity at the beam entrance surface. The model of the localized defect used in this paper is characterized by minority carriers with constant lifetimes that are lower than those in the bulk. An electron beam with an extended generation profile was used in a two-dimensional (2-D) device simulator, for the verification of the theory.
Subject
DRNTU::Engineering::Electrical and electronic engineering
Type
Journal Article
Series/Journal Title
IEEE transactions on electron devices
Rights
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Collections
http://dx.doi.org/10.1109/TED.2002.804703
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