Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102462
Title: Coexistence of write once read many memory and memristor in blend of Poly(3,4-ethylenedioxythiophene) : polystyrene sulfonate and polyvinyl alcohol
Authors: Nguyen, Viet Cuong
Lee, Pooi See
Keywords: Memory Device
Memristor
DRNTU::Engineering::Materials
Issue Date: 2016
Source: Nguyen, V. C., & Lee, P. S. (2016). Coexistence of write once read many memory and memristor in blend of Poly(3,4-ethylenedioxythiophene) : polystyrene sulfonate and polyvinyl alcohol. Scientific Reports, 6, 38816-. doi:10.1038/srep38816
Series/Report no.: Scientific Reports
Abstract: In this work, the coexistence of Write Once Read Many Memory (WORM) and memristor can be achieved in a single device of Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT: PSS) and Polyvinyl Alcohol (PVA) blend organic memory system. In memristor mode, the bistable resistance states of the device can be cycled for more than 1000 times. Once a large negative bias of −8V was applied to the device, it was switched to permanent high resistance state that cannot be restored back to lower resistance states. The mechanism of the memristor effect can be attributed to the charge trapping behaviour in PVA while the WORM effect can be explained as the electrochemical characteristic of PEDOT: PSS which harnesses the percolative conduction pathways. The results may facilitate multipurpose memory device with active tunability.
URI: https://hdl.handle.net/10356/102462
http://hdl.handle.net/10220/46520
DOI: http://dx.doi.org/10.1038/srep38816
Rights: © 2016 The Authors (Nature Publishing Group). This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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