Please use this identifier to cite or link to this item:
Title: Temperature and stress distribution in the SOI structure during fabrication
Authors: Tan, Cher Ming
Gan, Zhenghao
Gao, Xiaofang
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2003
Source: Tan, C. H., Gan, Z., & Gao, X. (2003). Temperature and stress distribution in the SOI structure during fabrication. IEEE Transactions on Semiconductor Manufacturing, 16(2), 314-318.
Series/Report no.: IEEE transactions on semiconductor manufacturing
Abstract: Silicon wafer bonding technology is becoming one of the key technologies in the silicon-on-insulator (SOI) structure fabrication. However, the high-temperature heat treatment during SOI fabrication is inevitable, and the thermal stress thus induced could have an adverse effect on the device fabricated and the bonding interface. In this work, a finite-element analysis software, ANSYS, is used to study the induced mechanical stresses at the interface during the withdrawal of wafers from a high-temperature furnace. It is found that the type of insulators and the geometric dimension of the devices such as the thickness of the work layer, insulator layer, and the substrate thickness are insignificant contributors to the induced thermal stresses. Although it is expected that the furnace temperature and withdrawal velocity are the key factors in determining the mechanical stresses, for the present bonding strength of wafers via wafer bonding technology, the withdrawal velocity must be less than 100 mm/min, and under such a withdrawal velocity, the furnace temperature is also an insignificant factor with regard to the induced stress.
ISSN: 0894-6507
DOI: 10.1109/TSM.2003.811886
Rights: © 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

Files in This Item:
File Description SizeFormat 
Temperature and Stress Distribution in the SOI Structure During Fabrication.pdfPublished version354.33 kBAdobe PDFThumbnail

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.