Spin-valve-like magnetoresistance in a Ni-Mn-In thin film
Date of Issue2018
School of Materials Science and Engineering
Spin valve devices, the resistive state of which is controlled by switching the magnetization of a free ferromagnetic layer with respect to a pinned ferromagnetic layer, rely on the scattering of electrons within the active medium to work. Here we demonstrate spin-valve-like effect in the Ni-Mn-In thin films, which consists of a ferromagnetic phase embedded in an antiferromagnetic matrix. Through transport and magnetic measurements, we confirm that scattering at the interfaces between the two phases gives rise to a unidirectional anisotropy and the spin-valve-like effect in this system. The magnitude of the spin-valve-like magnetoresistance (about 0.4% at 10 K) is stable within the temperature range of 10–400 K. The low- and high-resistance states cannot be destroyed even under a high magnetic field of 100 kOe. This finding opens up a way of realizing the spin valve effect in materials with competing ferromagnetic and antiferromagnetic interactions, where the interface between these phases acts as the active medium.
Physical Review B
© 2018 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The published version is available at: [http://dx.doi.org/10.1103/PhysRevB.97.214427]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.