dc.contributor.authorAgarwal, Sandeep
dc.contributor.authorWang, Baomin
dc.contributor.authorYang, Huali
dc.contributor.authorDhanapal, Pravarthana
dc.contributor.authorShen, Yuan
dc.contributor.authorWang, Junling
dc.contributor.authorWang, Hailong
dc.contributor.authorZhao, Jianhua
dc.contributor.authorLi, Run-Wei
dc.date.accessioned2018-11-07T01:53:52Z
dc.date.available2018-11-07T01:53:52Z
dc.date.issued2018
dc.identifier.citationAgarwal, S., Wang, B., Yang, H., Dhanapal, P., Shen, Y., Wang, J., . . . Li, R.-W. (2018). Spin-valve-like magnetoresistance in a Ni-Mn-In thin film. Physical Review B, 97(21), 214427-. doi:10.1103/PhysRevB.97.214427en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://hdl.handle.net/10220/46566
dc.description.abstractSpin valve devices, the resistive state of which is controlled by switching the magnetization of a free ferromagnetic layer with respect to a pinned ferromagnetic layer, rely on the scattering of electrons within the active medium to work. Here we demonstrate spin-valve-like effect in the Ni-Mn-In thin films, which consists of a ferromagnetic phase embedded in an antiferromagnetic matrix. Through transport and magnetic measurements, we confirm that scattering at the interfaces between the two phases gives rise to a unidirectional anisotropy and the spin-valve-like effect in this system. The magnitude of the spin-valve-like magnetoresistance (about 0.4% at 10 K) is stable within the temperature range of 10–400 K. The low- and high-resistance states cannot be destroyed even under a high magnetic field of 100 kOe. This finding opens up a way of realizing the spin valve effect in materials with competing ferromagnetic and antiferromagnetic interactions, where the interface between these phases acts as the active medium.en_US
dc.format.extent7 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesPhysical Review Ben_US
dc.rights© 2018 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The published version is available at: [http://dx.doi.org/10.1103/PhysRevB.97.214427]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectSpin Valveen_US
dc.subjectMagnetoresistanceen_US
dc.subjectDRNTU::Engineering::Materialsen_US
dc.titleSpin-valve-like magnetoresistance in a Ni-Mn-In thin filmen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.97.214427
dc.description.versionPublished versionen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record