Sensitivity analysis of coupled interconnects for RFIC applications
Yeo, Kiat Seng
Do, Manh Anh
Date of Issue2006
School of Electrical and Electronic Engineering
This paper investigates the sensitivity of on-wafer coupled interconnects to the Si CMOS process parameters. Experiments are conducted to emulate state-of-the-art and future technologies. Some important parameters characterizing the coupled interconnects have been examined. The influence of the process parameters on transmission, reflection, near-end, and far-end crosstalk capacities of the coupled interconnects are discussed.
DRNTU::Engineering::Electrical and electronic engineering
IEEE transactions on electromagnetic compatibility
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