Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/89020
Title: Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts
Authors: Hasanov, Namig
Zhu, Binbin
Sharma, Vijay Kumar
Lu, Shunpeng
Zhang, Yiping
Liu, Wei
Tan, Swee Tiam
Sun, Xiao Wei
Demir, Hilmi Volkan
Keywords: Light Emitting Diodes
Electrical Properties
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2016
Source: Hasanov, N., Zhu, B., Sharma, V. K., Lu, S., Zhang, Y., Liu, W., Tan, S. T., et al. (2016). Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 34(1), 011209-. doi:10.1116/1.4939186
Series/Report no.: Journal of Vacuum Science & Technology B
Abstract: In this work, the authors report the incorporation of TiW alloy in InGaN/GaN-based flip-chip light-emitting diodes (LEDs). The advantages provided by the use of TiW are analyzed in detail. InGaN/GaN multiple quantum well LEDs with a Ni/Ag/TiW metal stack are found to tolerate high-temperature annealing better than those with a Ni/Ag metal stack. Highly improved current–voltage characteristics and enhanced optical output power are achieved for the devices with a TiW thin layer. These changes are ascribed to the higher reflectivity, smoother surface, and better ohmic properties of the device containing TiW after annealing. Better heat management of the device with TiW is demonstrated by comparing electroluminescence spectra of the two device structures. Overall, these factors resulted in devices with TiW exhibiting a higher external quantum efficiency than devices without TiW. Detailed x-ray photoelectron spectroscopy analyses of the reflector metal stacks reveal little intermixing of the layers after annealing in the devices with TiW. The results show that incorporation of TiW is a promising approach for the fabrication of high-performance InGaN/GaN flip-chip LEDs.
URI: https://hdl.handle.net/10356/89020
http://hdl.handle.net/10220/47008
ISSN: 2166-2746
DOI: http://dx.doi.org/10.1116/1.4939186
Rights: © 2016 Science and Technology of Materials, Interfaces and Processing (formerly American Vacuum Society). This paper was published in Journal of Vacuum Science & Technology B and is made available as an electronic reprint (preprint) with permission of Science and Technology of Materials, Interfaces and Processing (formerly American Vacuum Society). The published version is available at: [http://dx.doi.org/10.1116/1.4939186]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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