dc.contributor.authorHasanov, Namig
dc.contributor.authorZhu, Binbin
dc.contributor.authorSharma, Vijay Kumar
dc.contributor.authorLu, Shunpeng
dc.contributor.authorZhang, Yiping
dc.contributor.authorLiu, Wei
dc.contributor.authorTan, Swee Tiam
dc.contributor.authorSun, Xiao Wei
dc.contributor.authorDemir, Hilmi Volkan
dc.date.accessioned2018-12-17T07:29:45Z
dc.date.available2018-12-17T07:29:45Z
dc.date.issued2016
dc.identifier.citationHasanov, N., Zhu, B., Sharma, V. K., Lu, S., Zhang, Y., Liu, W., Tan, S. T., et al. (2016). Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 34(1), 011209-. doi:10.1116/1.4939186en_US
dc.identifier.issn2166-2746en_US
dc.identifier.urihttp://hdl.handle.net/10220/47008
dc.description.abstractIn this work, the authors report the incorporation of TiW alloy in InGaN/GaN-based flip-chip light-emitting diodes (LEDs). The advantages provided by the use of TiW are analyzed in detail. InGaN/GaN multiple quantum well LEDs with a Ni/Ag/TiW metal stack are found to tolerate high-temperature annealing better than those with a Ni/Ag metal stack. Highly improved current–voltage characteristics and enhanced optical output power are achieved for the devices with a TiW thin layer. These changes are ascribed to the higher reflectivity, smoother surface, and better ohmic properties of the device containing TiW after annealing. Better heat management of the device with TiW is demonstrated by comparing electroluminescence spectra of the two device structures. Overall, these factors resulted in devices with TiW exhibiting a higher external quantum efficiency than devices without TiW. Detailed x-ray photoelectron spectroscopy analyses of the reflector metal stacks reveal little intermixing of the layers after annealing in the devices with TiW. The results show that incorporation of TiW is a promising approach for the fabrication of high-performance InGaN/GaN flip-chip LEDs.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en_US
dc.format.extent6 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of Vacuum Science & Technology Ben_US
dc.rights© 2016 Science and Technology of Materials, Interfaces and Processing (formerly American Vacuum Society). This paper was published in Journal of Vacuum Science & Technology B and is made available as an electronic reprint (preprint) with permission of Science and Technology of Materials, Interfaces and Processing (formerly American Vacuum Society). The published version is available at: [http://dx.doi.org/10.1116/1.4939186]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectLight Emitting Diodesen_US
dc.subjectElectrical Propertiesen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen_US
dc.titleImproved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contactsen_US
dc.typeJournal Article
dc.contributor.researchLUMINOUS! Centre of Excellence for Semiconductor Lighting and Displaysen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1116/1.4939186
dc.description.versionPublished versionen_US


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