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Title: Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures
Authors: Tobing, Landobasa Yosef Mario
Zhang, Dao-Hua
Tong, Jinchao
Xie, Yiyang
Xu, Zhengji
Qiu, Shupeng
Ni, Peinan
Keywords: Semiconductors
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2016
Source: Tong, J., Xie, Y., Xu, Z., Qiu, S., Ni, P., Tobing, L. Y. M., & Zhang, D.-H. (2016). Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures. AIP Advances, 6(2), 025120-. doi:10.1063/1.4942936
Series/Report no.: AIP Advances
Abstract: We report detailed investigation of n-GaSb/n-InAsSb heterostructure photodetectors for infrared photodetection at different temperatures and biases. Our results show that the heterostructure photodetectors are capable of dual color photodetections at a fixed forward bias with its highest responsivity occurred at room temperature; With the decrease of the forward bias, a turning point, at which the photocurrent changes its direction, exist and the corresponding voltage values increases with the decrease of temperature; At all reverse biases, the photocurrents flow in the same direction but the maximum current occurs at about 205 K. A new model is proposed, which can well explain all the observations.
DOI: 10.1063/1.4942936
Rights: © 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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