Effective channel length and external series resistance models of scaled LDD pMOSFETs operating in a Bi-MOS hybrid-mode environment
Seah, Lionel Siau Hing
Yeo, Kiat Seng
Do, Manh Anh
Date of Issue2001
School of Electrical and Electronic Engineering
The effective channel length L-eff and total external series resistance R-TOTEXT of deep submicron lightly doped drain (LDD) pMOSFETs, operating in a Bi-MOS hybrid-mode environment, have been modeled as functions of bias and temperature. The accuracy of the device threshold voltage used in the L-eff and R-TOTEXT extraction routine is discussed. The proposed models have been verified for temperature ranging from 223 K to 398 K and source-to-body voltage V(sb) ≥ 0 V conditions.
DRNTU::Engineering::Electrical and electronic engineering
IEEE transactions on electron devices
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