Effective channel length and external series resistance models of scaled LDD pMOSFETs operating in a Bi-MOS hybrid-mode environment
Date of Issue
2001School
School of Electrical and Electronic Engineering
Version
Published version
Abstract
The effective channel length L-eff and total external series resistance R-TOTEXT of deep submicron lightly doped drain (LDD) pMOSFETs, operating in a Bi-MOS hybrid-mode environment, have been modeled as functions of bias and temperature. The accuracy of the device threshold voltage used in the L-eff and R-TOTEXT extraction routine is discussed. The proposed models have been verified for temperature ranging from 223 K to 398 K and source-to-body voltage V(sb) ≥ 0 V
conditions.
Subject
DRNTU::Engineering::Electrical and electronic engineering
Type
Journal Article
Series/Journal Title
IEEE transactions on electron devices
Rights
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http://dx.doi.org/10.1109/16.918250
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