View Item 
      •   Home
      • 1. Schools
      • College of Engineering
      • School of Electrical and Electronic Engineering (EEE)
      • EEE Journal Articles
      • View Item
      •   Home
      • 1. Schools
      • College of Engineering
      • School of Electrical and Electronic Engineering (EEE)
      • EEE Journal Articles
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.
      Subject Lookup

      Browse

      All of DR-NTUCommunities & CollectionsTitlesAuthorsBy DateSubjectsThis CollectionTitlesAuthorsBy DateSubjects

      My Account

      Login

      Statistics

      Most Popular ItemsStatistics by CountryMost Popular Authors

      About DR-NTU

      Effective channel length and external series resistance models of scaled LDD pMOSFETs operating in a Bi-MOS hybrid-mode environment

      Thumbnail
      Published version (126.0Kb)
      Author
      Seah, Lionel Siau Hing
      Yeo, Kiat Seng
      Ma, Jianguo
      Do, Manh Anh
      Date of Issue
      2001
      School
      School of Electrical and Electronic Engineering
      Version
      Published version
      Abstract
      The effective channel length L-eff and total external series resistance R-TOTEXT of deep submicron lightly doped drain (LDD) pMOSFETs, operating in a Bi-MOS hybrid-mode environment, have been modeled as functions of bias and temperature. The accuracy of the device threshold voltage used in the L-eff and R-TOTEXT extraction routine is discussed. The proposed models have been verified for temperature ranging from 223 K to 398 K and source-to-body voltage V(sb) ≥ 0 V conditions.
      Subject
      DRNTU::Engineering::Electrical and electronic engineering
      Type
      Journal Article
      Series/Journal Title
      IEEE transactions on electron devices
      Rights
      © 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
      Collections
      • EEE Journal Articles
      http://dx.doi.org/10.1109/16.918250
      Get published version (via Digital Object Identifier)

      Show full item record


      NTU Library, Nanyang Avenue, Singapore 639798 © 2011 Nanyang Technological University. All rights reserved.
      DSpace software copyright © 2002-2015  DuraSpace
      Contact Us | Send Feedback
      Share |    
      Theme by 
      Atmire NV
       

       


      NTU Library, Nanyang Avenue, Singapore 639798 © 2011 Nanyang Technological University. All rights reserved.
      DSpace software copyright © 2002-2015  DuraSpace
      Contact Us | Send Feedback
      Share |    
      Theme by 
      Atmire NV
       

       

      DCSIMG