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|Title:||Theory of the single contact electron beam induced current effect||Authors:||Lau, K. T.
Ong, Vincent K. S.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2000||Source:||Ong, V. K. S., Lau, K. T., & Ma, J. G. (2000). Theory of the single contact electron beam induced current effect. IEEE Transactions nn Electron Devices, 47(4), 897-899.||Series/Report no.:||IEEE transactions and electron devices||Abstract:||All publications on the single contact electron beam induced current (SC-EBIC) technique so far have been concerned with the application of the technique. This paper seeks to examine the theory behind the technique and supports it with experimental observation. It will be shown that the technique can be used, not only on electron and ion beam machines, but also on any scanning equipment that is capable of generating electron-hole pairs.||URI:||https://hdl.handle.net/10356/91293
|ISSN:||0018-9383||DOI:||http://dx.doi.org/10.1109/16.831013||Rights:||© 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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