dc.contributor.authorWang, Bing
dc.contributor.authorWang, Cong
dc.contributor.authorLee, Kwang Hong
dc.contributor.authorBao, Shuyu
dc.contributor.authorLee, Kenneth Eng Kian
dc.contributor.authorTan, Chuan Seng
dc.contributor.authorYoon, Soon Fatt
dc.contributor.authorFitzgerald, Eugene A.
dc.contributor.authorMichel, Jurgen
dc.contributor.editorJeon, Heonsu*
dc.contributor.editorTu, Li-Wei*
dc.contributor.editorKrames, Michael R.*
dc.contributor.editorStrassburg, Martin*
dc.date.accessioned2018-12-26T08:09:15Z
dc.date.available2018-12-26T08:09:15Z
dc.date.issued2016
dc.identifier.citationWang, B., Wang, C., Lee, K. H., Bao, S., Lee, K. E. K., Tan, C. S., . . . Michel, J. (2016). Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 9768, 97681J-. doi:10.1117/12.2211562en_US
dc.identifier.urihttp://hdl.handle.net/10220/47211
dc.description.abstractThe integration of light emitting devices on silicon substrates has attracted intensive research for many years. In contrast to the InGaN light emitting diodes (LEDs) whose epitaxy technology on Si substrates is robust and mature, the epitaxy of other compound semiconductor light emitting materials covering the visible wavelength range on Si is still challenging. We have studied epitaxial growth of red InGaP light emitting materials on engineered Ge-on-Si substrates. Ge-on-Si was grown on 8’’ Si substrates in a metal organic chemical vapour deposition (MOCVD) reactor using two- step growth and cycling annealing. Threading dislocation densities (TDDs) were controlled to as low as 106/cm2 by using As-doped Ge initiation. A GaAs buffer layer and lattice-matched InGaP LEDs were grown on the Ge-on-Si sequentially in the same MOCVD process and red LEDs are demonstrated. InGaP multiple-quantum-well LED structures were grown on full 8’’ Ge-on-Si substrates and characterized.en_US
dc.format.extent6 p.en_US
dc.language.isoenen_US
dc.rights© 2016 Society of Photo-optical Instrumentation Engineers (SPIE). This paper was published in Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX and is made available as an electronic reprint (preprint) with permission of Society of Photo-optical Instrumentation Engineers (SPIE). The published version is available at: [http://dx.doi.org/10.1117/12.2211562]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectInGaP LEDsen_US
dc.subjectGe-on-Si Substrateen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen_US
dc.titleRed InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substratesen_US
dc.typeConference Paper
dc.contributor.conferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1117/12.2211562
dc.description.versionPublished versionen_US


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