Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103404
Title: Conduction mechanisms on high retention annealed mgo-based resistive switching memory devices
Authors: Loy, Desmond Jia Jun
Dananjaya, Putu Andhita
Hong, Xiao Liang
Shum, D. P.
Lew, Wensiang
Keywords: Conduction Mechanisms
Schottky Emission
DRNTU::Science::Chemistry
Issue Date: 2018
Source: Loy, D. J. J., Dananjaya, P. A., Hong, X. L., Shum, D. P., & Lew, W. S. (2018). Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices. Scientific Reports, 8(1), 14774-. doi:10.1038/s41598-018-33198-0
Series/Report no.: Scientific Reports
Abstract: We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures and transmission electron microscopy (TEM) results. Retention of more than 10 years at 85 °C was obtained for both Ru/MgO/Ta and Ru/MgO/Cu RSM devices. In addition, annealing processes greatly improved the consistency of HRS and LRS switching paths from cycle to cycle, exhibiting an average ON/OFF ratio of 102. Further TEM studies also highlighted the difference in crystallinity between different materials in Ru/MgO/Cu RSM devices, confirming Cu filament identification which was found to be 10 nm in width.
URI: https://hdl.handle.net/10356/103404
http://hdl.handle.net/10220/47306
DOI: http://dx.doi.org/10.1038/s41598-018-33198-0
Rights: © 2018 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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