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https://hdl.handle.net/10356/81287
Title: | Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs) | Authors: | Kumar, Annie Lee, Shuh-Ying Yadav, Sachin Tan, Kian Hua Loke, Wan Khai Dong, Yuan Lee, Kwang Hong Wicaksono, Satrio Liang, Gengchiau Yoon, Soon-Fatt Antoniadis, Dimitri Yeo, Yee-Chia Gong, Xiao |
Keywords: | Integrated Optics Integrated Optoelectronic Circuits DRNTU::Engineering::Electrical and electronic engineering |
Issue Date: | 2017 | Source: | Kumar, A., Lee, S.-Y., Yadav, S., Tan, K. H., Loke, W. K., Dong, Y., ... Gong, X. (2017). Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs). Optics Express, 25(25), 31853-31862. doi:10.1364/OE.25.031853 | Series/Report no.: | Optics Express | Abstract: | Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an ION/IOFF ratio of more than 106 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C. | URI: | https://hdl.handle.net/10356/81287 http://hdl.handle.net/10220/47459 |
DOI: | 10.1364/OE.25.031853 | Schools: | School of Electrical and Electronic Engineering | Rights: | © 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Journal Articles |
Files in This Item:
File | Description | Size | Format | |
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Integration of InGaAs MOSFETs and GaAs.pdf | 3.59 MB | Adobe PDF | View/Open |
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