dc.contributor.authorWang, Xiaoshan
dc.contributor.authorWang, Zhiwei
dc.contributor.authorZhang, Jindong
dc.contributor.authorWang, Xiang
dc.contributor.authorZhang, Zhipeng
dc.contributor.authorWang, Jialiang
dc.contributor.authorZhu, Zhaohua
dc.contributor.authorLi, Zhuoyao
dc.contributor.authorLiu, Yao
dc.contributor.authorHu, Xuefeng
dc.contributor.authorQiu, Junwen
dc.contributor.authorHu, Guohua
dc.contributor.authorChen, Bo
dc.contributor.authorWang, Ning
dc.contributor.authorHe, Qiyuan
dc.contributor.authorChen, Junze
dc.contributor.authorYan, Jiaxu
dc.contributor.authorZhang, Wei
dc.contributor.authorHasan, Tawfique
dc.contributor.authorLi, Shaozhou
dc.contributor.authorLi, Hai
dc.contributor.authorZhang, Hua
dc.contributor.authorWang, Qiang
dc.contributor.authorHuang, Xiao
dc.contributor.authorHuang, Wei
dc.date.accessioned2019-01-16T04:06:08Z
dc.date.available2019-01-16T04:06:08Z
dc.date.issued2018
dc.identifier.citationWang, X., Wang, Z., Zhang, J., Wang, X., Zhang, Z., Wang, J., . . . Huang, W. (2018). Realization of vertical metal semiconductor heterostructures via solution phase epitaxy. Nature Communications, 9, 3611-. doi:10.1038/s41467-018-06053-zen_US
dc.identifier.urihttp://hdl.handle.net/10220/47481
dc.description.abstractThe creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phases. Herein, we report, based on experimental and simulation results, that alloying between 1T-SnS2 and 1T-WS2 induces a charge redistribution in Sn and W to realize metallic Sn0.5W0.5S2 nanosheets. These nanosheets are epitaxially deposited on surfaces of semiconducting SnS2 nanoplates to form vertical heterostructures. The ohmic-like contact formed at the Sn0.5W0.5S2/SnS2 heterointerface affords rapid transport of charge carriers, and allows for the fabrication of fast photodetectors. Such facile charge transfer, combined with a high surface affinity for acetone molecules, further enables their use as highly selective 100 ppb level acetone sensors. Our work suggests that combining compositional and structural control in solution-phase epitaxy holds promises for solution-processible thin-film optoelectronics and sensors.en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.format.extent11 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesNature Communicationsen_US
dc.rights© 2018 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.en_US
dc.subjectMetal Semiconductor Heterostructuresen_US
dc.subjectSolution Phase Epitaxyen_US
dc.subjectDRNTU::Engineering::Materialsen_US
dc.titleRealization of vertical metal semiconductor heterostructures via solution phase epitaxyen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1038/s41467-018-06053-z
dc.description.versionPublished versionen_US
dc.contributor.organizationCenter for Programmable Materialsen_US


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