dc.contributor.authorHusein, Sebastian
dc.contributor.authorStuckelberger, Michael
dc.contributor.authorWest, Bradley
dc.contributor.authorDing, Laura
dc.contributor.authorDauzou, Fabien
dc.contributor.authorMorales-Masis, Monica
dc.contributor.authorDuchamp, Martial
dc.contributor.authorHolman, Zachary
dc.contributor.authorBertoni, Mariana I.
dc.identifier.citationHusein, S., Stuckelberger, M., West, B., Ding, L., Dauzou, F., Morales-Masis, M., . . . Bertoni, M. I. (2018). Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide. Journal of Applied Physics, 123(24), 245102-. doi:10.1063/1.5033561en_US
dc.description.abstractHydrogen-doped indium oxide (IO:H) has recently garnered attention as a high-performance transparent conducting oxide (TCO) and has been incorporated into a wide array of photovoltaic devices due to its high electron mobility (>100 cm2/V s) and transparency (>90% in the visible range). Here, we demonstrate IO:H thin-films deposited by sputtering with mobilities in the wide range of 10–100 cm2/V s and carrier densities of 4 × 1018 cm–3–4.5 × 1020 cm–3 with a large range of hydrogen incorporation. We use the temperature-dependent Hall mobility from 5 to 300 K to determine the limiting electron scattering mechanisms for each film and identify the temperature ranges over which these remain significant. We find that at high hydrogen concentrations, the grain size is reduced, causing the onset of grain boundary scattering. At lower hydrogen concentrations, a combination of ionized impurity and polar optical phonon scattering limits mobility. We find that the influence of ionized impurity scattering is reduced with the increasing hydrogen content, allowing a maximization of mobility >100 cm2/V s at moderate hydrogen incorporation amounts prior to the onset of grain boundary scattering. By investigating the parameter space of the hydrogen content, temperature, and grain size, we define the three distinct regions in which the grain boundary, ionized impurity, and polar optical phonon scattering operate in this high mobility TCO.en_US
dc.format.extent9 p.en_US
dc.relation.ispartofseriesJournal of Applied Physicsen_US
dc.rights© 2018 The Author(s). All rights reserved. This paper was published by AIP Publishing in Journal of Applied Physics and is made available with permission of The Author(s).en_US
dc.subjectCarrier Scatteringen_US
dc.subjectHydrogen-doped Indium Oxideen_US
dc.titleCarrier scattering mechanisms limiting mobility in hydrogen-doped indium oxideen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.description.versionPublished versionen_US

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