dc.contributor.authorWang, Wei
dc.contributor.authorLei, Dian
dc.contributor.authorHuang, Yi-Chiau
dc.contributor.authorLee, Kwang Hong
dc.contributor.authorLoke, Wan-Khai
dc.contributor.authorDong, Yuan
dc.contributor.authorXu, Shengqiang
dc.contributor.authorTan, Chuan Seng
dc.contributor.authorWang, Hong
dc.contributor.authorYoon, Soon-Fatt
dc.contributor.authorGong, Xiao
dc.contributor.authorYeo, Yee-Chia
dc.date.accessioned2019-01-31T06:40:43Z
dc.date.available2019-01-31T06:40:43Z
dc.date.issued2018
dc.identifier.citationWang, W., Lei, D., Huang, Y.-C., Lee, K. H., Loke, W.-K., Dong, Y., . . . Yeo, Y.-C. (2018). High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform. Optics Express, 26(8), 10305-.en_US
dc.identifier.urihttp://hdl.handle.net/10220/47598
dc.description.abstractWe report the first demonstration of high-performance GeSn metal-semiconductor-metal (MSM) photodetector and GeSn p-type fin field-effect transistor (pFinFET) on an advanced GeSn-on-insulator (GeSnOI) platform by complementary metal-oxide-semiconductor (CMOS) compatible processes. The detection range of GeSn photodetector is extended beyond 2 µm, with responsivities of 0.39 and 0.10 A/W at 1550 nm and 2003 nm, respectively. Through the insertion of an ultrathin Al2O3 Schottky-barrier-enhancement layer, the dark current IDark of the GeSn photodetector is suppressed by more than 2 orders of magnitude. An impressive IDark of ~65 nA was achieved at an operating voltage of 1.0 V. A frequency response measurement reveals the achievement of a 3-dB bandwidth of ~1.4 GHz at an illumination wavelength of 2 µm. GeSn pFinFET with fin width (Wfin) scaled down to 15 nm was also fabricated on the GeSnOI platform, exhibiting a small subthreshold swing (S) of 93 mV/decade, a high drive current of 176 µA/µm, and good control of short channel effects (SCEs). This work paves the way for realizing compact, low-cost, and multi-functional GeSn-on-insulator opto-electronic integrated circuits.en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.format.extent10 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesOptics Expressen_US
dc.rights© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.en_US
dc.subjectOptoelectronicsen_US
dc.subjectIntegrated Opticsen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen_US
dc.titleHigh-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platformen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1364/OE.26.010305
dc.description.versionPublished versionen_US


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