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https://hdl.handle.net/10356/87347
Title: | Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region | Authors: | Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt Jia, Bo Wen |
Keywords: | Detectors DRNTU::Engineering::Electrical and electronic engineering Infrared |
Issue Date: | 2018 | Source: | Jia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2018). Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region. Optics Express, 26(6), 7227-. doi:10.1364/OE.26.007227 | Series/Report no.: | Optics Express | Abstract: | In this study, InSb p-i-n photodetectors with In0.82Al0.18Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the GaSb/Si and InSb/AlSb interfaces accommodated the lattice mismatch. The In0.82Al0.18Sb barrier layer increased the 77 K R0A of the detector. From 180 K to 300 K, the generation-recombination mechanism dominated the dark current generation in the detector and surface leakage became dominant below 120 K. The detector exhibited a 77 K responsivity of 0.475 A/W and a Johnson-noise-limited detectivity of 3.08 × 109 cmHz1/2W−1 at 5.3 µm. | URI: | https://hdl.handle.net/10356/87347 http://hdl.handle.net/10220/47599 |
DOI: | 10.1364/OE.26.007227 | Schools: | School of Electrical and Electronic Engineering | Rights: | © 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Journal Articles |
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Integration of an InSb photodetector on Si via.pdf | 2.57 MB | Adobe PDF | View/Open |
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