dc.contributor.authorJia, Bo Wen
dc.contributor.authorTan, Kian Hua
dc.contributor.authorLoke, Wan Khai
dc.contributor.authorWicaksono, Satrio
dc.contributor.authorYoon, Soon Fatt
dc.identifier.citationJia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2018). Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region. Optics Express, 26(6), 7227-. doi:10.1364/OE.26.007227en_US
dc.description.abstractIn this study, InSb p-i-n photodetectors with In0.82Al0.18Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the GaSb/Si and InSb/AlSb interfaces accommodated the lattice mismatch. The In0.82Al0.18Sb barrier layer increased the 77 K R0A of the detector. From 180 K to 300 K, the generation-recombination mechanism dominated the dark current generation in the detector and surface leakage became dominant below 120 K. The detector exhibited a 77 K responsivity of 0.475 A/W and a Johnson-noise-limited detectivity of 3.08 × 109 cmHz1/2W−1 at 5.3 µm.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.format.extent8 p.en_US
dc.relation.ispartofseriesOptics Expressen_US
dc.rights© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen_US
dc.titleIntegration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength regionen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionPublished versionen_US

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