dc.contributor.authorXu, Shengqiang
dc.contributor.authorHuang, Yi-Chiau
dc.contributor.authorLee, Kwang Hong
dc.contributor.authorWang, Wei
dc.contributor.authorDong, Yuan
dc.contributor.authorLei, Dian
dc.contributor.authorMasudy-Panah, Saeid
dc.contributor.authorTan, Chuan Seng
dc.contributor.authorGong, Xiao
dc.contributor.authorYeo, Yee-Chia
dc.date.accessioned2019-02-12T08:15:07Z
dc.date.available2019-02-12T08:15:07Z
dc.date.issued2018
dc.identifier.citationXu, S., Huang, Y.-C., Lee, K. H., Wang, W., Dong, Y., Lei, D., . . . Yeo, Y.-C. (2018). GeSn lateral p-i-n photodetector on insulating substrate. Optics Express, 26(13), 17312-17321. doi:10.1364/OE.26.017312en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://hdl.handle.net/10220/47645
dc.description.abstractWe report the first experimental demonstration of germanium-tin (GeSn) lateral p-i-n photodetector on a novel GeSn-on-insulator (GeSnOI) substrate. The GeSnOI is formed by direct wafer bonding and layer transfer technique, which is promising for large-scale integration of nano-electronics and photonics devices. The fabricated GeSnOI photodetector shows well-behaved diode characteristics with high Ion/Ioff ratio of ~4 orders of magnitude (at ± 1 V) at room temperature. A cutoff detection beyond 2 µm with photo responsivity (Rop) of 0.016 A/W was achieved at the wavelength (λ) of 2004 nm.en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.format.extent10 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesOptics Expressen_US
dc.rights© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.en_US
dc.subjectPhotodetectorsen_US
dc.subjectDiode Characteristicsen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen_US
dc.titleGeSn lateral p-i-n photodetector on insulating substrateen_US
dc.typeJournal Article
dc.contributor.researchSingapore-MIT Alliance Programmeen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1364/OE.26.017312
dc.description.versionPublished versionen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record