Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/89085
Title: Optically reversible electrical soft-breakdown in wide-bandgap oxides — a factorial study
Authors: Zhou, Yu
Ang, Diing Shenp
Kalaga, Pranav Sairam
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Optical Sensing Applications
Wide-bandgap Oxides
Issue Date: 2018
Source: Zhou, Y., Ang, D. S., & Kalaga, P. S. (2018). Optically reversible electrical soft-breakdown in wide-bandgap oxides — a factorial study. Journal of Applied Physics, 123(16), 161555-. doi:10.1063/1.5002606
Series/Report no.: Journal of Applied Physics
Abstract: In an earlier work, we found that an electrical soft-breakdown region in wide-bandgap oxides, such as hafnium dioxide, silicon dioxide, etc., could be reversed when illuminated by white light. The effect is evidenced by a decrease in the breakdown leakage current, termed as a negative photoconductivity response. This finding raises the prospect for optical sensing applications based on these traditionally non-photo-responsive but ubiquitous oxide materials. In this study, we examine the statistical distribution for the rate of breakdown reversal as well as the influence of factors such as wavelength, light intensity, oxide stoichiometry (or oxygen content) and temperature on the reversal rate. The rate of breakdown reversal is shown to be best described by the lognormal distribution. Light in the range of ∼400–700 nm is found to have relatively little influence on the reversal rate. On the other hand, light intensity, oxygen content and temperature, each of them has a clear impact; a stronger light intensity, an oxide that is richer in oxygen content and a reduced temperature all speed up the reversal process substantially. These experimental results are consistent with the proposed phenomenological redox model involving photo-assisted recombination of the surrounding oxygen interstitials with vacancy defects in the breakdown path.
URI: https://hdl.handle.net/10356/89085
http://hdl.handle.net/10220/47658
ISSN: 0021-8979
DOI: 10.1063/1.5002606
Rights: © 2018 The Author(s). All rights reserved. This paper was published by AIP Publishing in Journal of Applied Physics and is made available with permission of The Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.