Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85355
Title: SiGe bandgap tuning for high speed eam
Authors: Mastronardi, Lorenzo
Banakar, Mehdi
Khokhar, Ali Z.
Bernier, Nicolas
Robin, Eric
Bucio, Thalía Domínguez
Littlejohns, Callum G.
Gardes, Frederic Y.
Rouviere, J.-L.
Dansas, Hugo
Gambacorti, Narciso
Mashanovich, Goran Z.
Gardes, Frederic Y.
Keywords: SiGe
Bandgap
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2017
Source: Mastronardi, L., Banakar, M., Khokhar, A. Z., Bucio, T. D., Littlejohns, C. G., Bernier, N., . . . Gardes, F. Y. (2017). SiGe bandgap tuning for high speed eam. ECS Transactions, 77(6), 59-63. doi:10.1149/07706.0059ecst
Series/Report no.: ECS Transactions
Abstract: We report bandgap engineering of Ge rich SiGe rib waveguides between 1550 nm and 1580 nm through an annealing process. The insertion loss of the material (transmission spectrum) is analysed between 1520 nm and 1600 nm. The experimental data are elaborated by implementing the Tauc Method analysis, and the material bandgap estimation is calculated. A maximum blue shift of 38 nm, with an overall reduction of Si content, suggests that the diffusion of Si in the Ge seed layer during anneal improves the homogeneity of the growth layer. The proposed technique provides a path for tailoring the operational wavelength of devices such as electro-absorption modulators, realized on an SOI platform.
URI: https://hdl.handle.net/10356/85355
http://hdl.handle.net/10220/48204
ISSN: 1938-5862
DOI: http://dx.doi.org/10.1149/07706.0059ecst
Rights: © 2017 The Electrochemical Society. All rights reserved. This paper was published in ECS Transactions and is made available with permission of The Electrochemical Society.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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