dc.contributor.authorLin, Yiding
dc.contributor.authorAnantha, P.
dc.contributor.authorLee, Kwang Hong
dc.contributor.authorChua, Shen Lin
dc.contributor.authorShang, Lingru
dc.contributor.authorTan, Chuan Seng
dc.date.accessioned2019-05-15T04:08:22Z
dc.date.available2019-05-15T04:08:22Z
dc.date.issued2015
dc.identifier.citationLin, Y., Anantha, P., Lee, K. H., Chua, S. L., Shang, L., & Tan, C. S. (2016). Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding. ECS Journal of Solid State Science and Technology, 5(2), P117-P123. doi:10.1149/2.0351602jssen_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://hdl.handle.net/10220/48206
dc.description.abstractThermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration. Thermal stress simulation indicates that Al2O3 bonding layer efficiently mitigates the stress as observed at top InP surface, compared to that of conventional SiO2 intermediate layer. By introducing IPOCs, the thermal stress decreases with increasing IPOC spacing-to-width (S/W) ratio. Experimentally, high quality InP/Al2O3/Si direct bonding is firstly demonstrated. Seamless bonding interface is observed, along with reasonable bond shear strength of 2.57 MPa and minimal residual stress in the transferred InP layer. Efficiency of the IPOCs is then evaluated by comparing interfacial void densities of InP bonded on dimension-varied-IPOC-patterned Si. A significant void density reduction up to two orders of magnitude is observed, with a decreasing S/W ratio. An optimal S/W ratio of 2.5 is therefore proposed to compromise between the thermal stress degradation (∼10%) and outgassing efficiency improvement (∼90% void density suppression). This work is thus significant as it could provide guidelines to establish high quality hybrid-integrated optoelectronic devices for Si photonic applications.en_US
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en_US
dc.format.extent7 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesECS Journal of Solid State Science and Technologyen_US
dc.rights© 2015 The Electrochemical Society. All rights reserved. This paper was published in ECS Journal of Solid State Science and Technology and is made available with permission of The Electrochemical Society.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen_US
dc.subjectHomogeneous Direct Bondingen_US
dc.subjectHybrid Integrationen_US
dc.titleGeometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bondingen_US
dc.typeJournal Article
dc.contributor.researchResearch Techno Plazaen_US
dc.contributor.researchTemasek Laboratoriesen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1149/2.0351602jss
dc.description.versionPublished versionen_US


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