dc.contributor.authorLodge, Michael S.
dc.contributor.authorChang, Guoqing
dc.contributor.authorHuang, Cheng-Yi
dc.contributor.authorSingh, Bahadur
dc.contributor.authorHellerstedt, Jack
dc.contributor.authorEdmonds, Mark T.
dc.contributor.authorKaczorowski, Dariusz
dc.contributor.authorMd. Mofazzel Hosen
dc.contributor.authorNeupane, Madhab
dc.contributor.authorLin, Hsin
dc.contributor.authorFuhrer, Michael S.
dc.contributor.authorWeber, Bent
dc.contributor.authorIshigami, Masahiro
dc.date.accessioned2019-05-22T04:43:14Z
dc.date.available2019-05-22T04:43:14Z
dc.date.issued2017
dc.identifier.citationLodge, M. S., Chang, G., Huang, C.-Y., Singh, B., Hellerstedt, J., Edmonds, M. T., . . . Ishigami, M. (2017). Observation of effective pseudospin scattering in ZrSiS. Nano Letters, 17(12), 7213-7217. doi:10.1021/acs.nanolett.7b02307en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://hdl.handle.net/10220/48315
dc.description.abstract3D Dirac semimetals are an emerging class of materials that possess topological electronic states with a Dirac dispersion in their bulk. In nodal-line Dirac semimetals, the conductance and valence bands connect along a closed path in momentum space, leading to the prediction of pseudospin vortex rings and pseudospin skyrmions. Here, we use Fourier transform scanning tunneling spectroscopy (FT-STS) at 4.5 K to resolve quasiparticle interference (QPI) patterns at single defect centers on the surface of the line nodal semimetal zirconium silicon sulfide (ZrSiS). Our QPI measurements show pseudospin conservation at energies close to the line node. In addition, we determine the Fermi velocity to be ℏvF = 2.65 ± 0.10 eV Å in the Γ–M direction ∼300 meV above the Fermi energy EF and the line node to be ∼140 meV above EF. More importantly, we find that certain scatterers can introduce energy-dependent nonpreservation of pseudospin, giving rise to effective scattering between states with opposite pseudospin deep inside valence and conduction bands. Further investigations of quasiparticle interference at the atomic level will aid defect engineering at the synthesis level, needed for the development of lower-power electronics via dissipationless electronic transport in the future.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.format.extent5 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesNano Lettersen_US
dc.rights© 2017 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.7b02307en_US
dc.subjectDirac Line Node Semimetalen_US
dc.subjectLow-temperature Scanning Tunneling Microscopyen_US
dc.subjectDRNTU::Science::Physicsen_US
dc.titleObservation of effective pseudospin scattering in ZrSiSen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doihttp://dx.doi.org/10.1021/acs.nanolett.7b02307
dc.description.versionAccepted versionen_US


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