Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/86807
Title: Observation of effective pseudospin scattering in ZrSiS
Authors: Md. Mofazzel Hosen
Singh, Bahadur
Hellerstedt, Jack
Edmonds, Mark T.
Kaczorowski, Dariusz
Neupane, Madhab
Lin, Hsin
Fuhrer, Michael S.
Weber, Bent
Ishigami, Masahiro
Lodge, Michael S.
Chang, Guoqing
Huang, Cheng-Yi
Keywords: DRNTU::Science::Physics
Dirac Line Node Semimetal
Low-temperature Scanning Tunneling Microscopy
Issue Date: 2017
Source: Lodge, M. S., Chang, G., Huang, C.-Y., Singh, B., Hellerstedt, J., Edmonds, M. T., . . . Ishigami, M. (2017). Observation of effective pseudospin scattering in ZrSiS. Nano Letters, 17(12), 7213-7217. doi:10.1021/acs.nanolett.7b02307
Journal: Nano Letters
Series/Report no.: Nano Letters
Abstract: 3D Dirac semimetals are an emerging class of materials that possess topological electronic states with a Dirac dispersion in their bulk. In nodal-line Dirac semimetals, the conductance and valence bands connect along a closed path in momentum space, leading to the prediction of pseudospin vortex rings and pseudospin skyrmions. Here, we use Fourier transform scanning tunneling spectroscopy (FT-STS) at 4.5 K to resolve quasiparticle interference (QPI) patterns at single defect centers on the surface of the line nodal semimetal zirconium silicon sulfide (ZrSiS). Our QPI measurements show pseudospin conservation at energies close to the line node. In addition, we determine the Fermi velocity to be ℏvF = 2.65 ± 0.10 eV Å in the Γ–M direction ∼300 meV above the Fermi energy EF and the line node to be ∼140 meV above EF. More importantly, we find that certain scatterers can introduce energy-dependent nonpreservation of pseudospin, giving rise to effective scattering between states with opposite pseudospin deep inside valence and conduction bands. Further investigations of quasiparticle interference at the atomic level will aid defect engineering at the synthesis level, needed for the development of lower-power electronics via dissipationless electronic transport in the future.
URI: https://hdl.handle.net/10356/86807
http://hdl.handle.net/10220/48315
ISSN: 1530-6984
DOI: 10.1021/acs.nanolett.7b02307
Rights: © 2017 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.7b02307
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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