Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90129
Title: A novel germanium-on-silicon nitride platform for Mid-IR sensing
Authors: Li, Wei
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 27-May-2019
Source: Li, W. (2019). A novel germanium-on-silicon nitride platform for Mid-IR sensing. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: In recent years, the wavelength range over which silicon photonics can operate has been extended to the mid-infrared (IR) regions (2 to 20 μm). Since many molecules and substances have their specific absorption peaks in the Mid-IR range, this has provided us with a good opportunity to use silicon photonic device as a sensor to trace elements of chemicals in either gas, liquid or solid phases. In addition, Mid-IR also has many potential applications in free space data communication, IR imaging of biological tissues, spectroscopy and many others.
URI: https://hdl.handle.net/10356/90129
http://hdl.handle.net/10220/48387
DOI: https://doi.org/10.32657/10220/48387
metadata.item.grantfulltext: open
metadata.item.fulltext: With Fulltext
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