Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90142
Title: Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding
Authors: Abdul Kadir
Wang, Yue
Lee, Kenneth E.
Tan, Chuan Seng
Chua, Soo Jin
Fitzgerald, Eugene A.
Zhang, Li
Lee, Kwang Hong
Keywords: Si CMOS
AlGaN Layers
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Zhang, L., Lee, K. H., Abdul Kadir., Wang, Y., Lee, K. E., Tan, C. S., . . . Fitzgerald, E. A. (2018). Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding. Japanese Journal of Applied Physics, 57(5), 051002-. doi:10.7567/JJAP.57.051002
Series/Report no.: Japanese Journal of Applied Physics
Abstract: Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si(111) substrate is correlated with the wafer curvature of the starting GaN-on-Si wafers and the voids on the GaN-on-Si surface that evolve into cracks on the GaN-OI wafers. In crack-free GaN-OI wafers, the wafer curvature during the removal of the AlN nucleation layer, AlGaN strain-compensation buffer layers and GaN layers is correlated with the residual stress distribution within individual layers in the GaN-OI wafer.
URI: https://hdl.handle.net/10356/90142
http://hdl.handle.net/10220/48410
ISSN: 0021-4922
DOI: http://dx.doi.org/10.7567/JJAP.57.051002
Rights: © 2018 The Japan Society of Applied Physics. All rights reserved. This paper was published in Japanese Journal of Applied Physics and is made available with permission of The Japan Society of Applied Physics.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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