Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102385
Title: Importance of Schottky barriers for wide-bandgap thermoelectric devices
Authors: Wais, M.
Held, K.
Battiato, Marco
Keywords: DRNTU::Science::Physics
Seebeck Effect
Thermopower
Issue Date: 2018
Source: Wais, M., Held, K., & Battiato, M. (2018). Importance of Schottky barriers for wide-bandgap thermoelectric devices. Physical Review Materials, 2(4), 045402-. doi:10.1103/PhysRevMaterials.2.045402
Series/Report no.: Physical Review Materials
Abstract: The development of thermoelectric devices faces not only the challenge of optimizing the Seebeck coefficient, the electrical and thermal conductivity of the active material, but also further bottlenecks when going from the thermoelectric material to an actual device, e.g., the dopant diffusion at the hot contact. We show that for large bandgap thermoelectrics another aspect can dramatically reduce the efficiency of the device: the formation of Schottky barriers. Understanding the effect, it can then be fixed rather cheaply by a two-metal contact solution.
URI: https://hdl.handle.net/10356/102385
http://hdl.handle.net/10220/48589
DOI: http://dx.doi.org/10.1103/PhysRevMaterials.2.045402
Rights: © 2018 American Physical Society. All rights reserved. This paper was published in Physical Review Materials and is made available with permission of American Physical Society.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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