Please use this identifier to cite or link to this item:
|Title:||Importance of Schottky barriers for wide-bandgap thermoelectric devices||Authors:||Wais, M.
|Issue Date:||2018||Source:||Wais, M., Held, K., & Battiato, M. (2018). Importance of Schottky barriers for wide-bandgap thermoelectric devices. Physical Review Materials, 2(4), 045402-. doi:10.1103/PhysRevMaterials.2.045402||Series/Report no.:||Physical Review Materials||Abstract:||The development of thermoelectric devices faces not only the challenge of optimizing the Seebeck coefficient, the electrical and thermal conductivity of the active material, but also further bottlenecks when going from the thermoelectric material to an actual device, e.g., the dopant diffusion at the hot contact. We show that for large bandgap thermoelectrics another aspect can dramatically reduce the efficiency of the device: the formation of Schottky barriers. Understanding the effect, it can then be fixed rather cheaply by a two-metal contact solution.||URI:||https://hdl.handle.net/10356/102385
|DOI:||http://dx.doi.org/10.1103/PhysRevMaterials.2.045402||Rights:||© 2018 American Physical Society. All rights reserved. This paper was published in Physical Review Materials and is made available with permission of American Physical Society.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SPMS Journal Articles|
Files in This Item:
|Importance of Schottky barriers for wide-bandgap thermoelectric device.pdf||451.6 kB||Adobe PDF|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.