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Title: Switching domain wall motion on and off using a gate voltage for domain wall transistor applications
Authors: Ma, Chuang
Jin, Tianli
Liu, Xiaoxi
Piramanayagam, Seidikkurippu Nellainayagam
Issue Date: 2018
Source: Ma, C., Jin, T., Liu, X., & Piramanayagam, S. N. (2018). Switching domain wall motion on and off using a gate voltage for domain wall transistor applications. Applied Physics Letters, 113(23), 232401-. doi:10.1063/1.5053852
Series/Report no.: Applied Physics Letters
Abstract: Spintronic devices such as magnetic random access memory and domain wall (DW) memory are attracting significant attention. Spin-field effect transistor devices have been proposed and researched for logic applications. In domain wall memory, the information is stored in magnetic domain states, which can be moved with a current above a certain threshold value. So far, the domain wall motion is only determined by the current density for most of the DW devices. Here, we demonstrate experimentally that a significant change in domain wall mobility can be achieved by applying a gate voltage. By applying a positive gate voltage, we show that the threshold current density for DW motion can be reduced by more than 10%. By choosing a suitable operating current, the domain wall motion can be switched on or off by the use of a gate voltage. These results are promising for designing high performance domain wall based transistor devices with faster operation speed and lower power consumption.
ISSN: 0003-6951
DOI: 10.1063/1.5053852
Rights: © 2018 The Author(s). All rights reserved. This paper was published by AIP in Applied Physics Letters and is made available with permission of The Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
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