Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85305
Title: Novel optoelectronic devices : transition‐metal‐dichalcogenide‐based 2D heterostructures
Authors: Zeng, Qingsheng
Liu, Zheng
Keywords: Engineering::Materials
Optoelectronics
2D Heterostructures
Issue Date: 2018
Source: Zeng, Q., & Liu, Z. (2018). Novel optoelectronic devices : transition‐metal‐dichalcogenide‐based 2D heterostructures. Advanced Electronic Materials, 4(2), 1700335-. doi:10.1002/aelm.201700335
Series/Report no.: Advanced Electronic Materials
Abstract: Over the past decade, graphene and other 2D materials have attracted much attention in both fundamental studies and potential applications due to their extraordinary properties. In particular, heterostructures based on these van der Waals (vdW) materials have become one of the leading hot topics in the electronic and optoelectronic field. As representative photoactive 2D materials, transition metal dichalcogenides (TMDs) play a critical role in the creation of 2D optoelectronic heterojunctions themselves or in combination with other 2D materials. Here, the optoelectronics of three types of TMD‐based 2D heterostructures are reviewed: (1) heterostructures between different TMDs, including vertical vdW heterojunctions fabricated by mechanical transfer and direct synthesis, and lateral in‐plane heterostructures formed via epitaxial growth; (2) heterostructures between TMDs and graphene built by stacking, vdW epitaxy, and lateral assembly; (3) heterostructures between TMDs and other novel 2D materials, such as black phosphorus and GaTe. The operation mechanism of all these optoelectronic devices is discussed.
URI: https://hdl.handle.net/10356/85305
http://hdl.handle.net/10220/49203
DOI: http://dx.doi.org/10.1002/aelm.201700335
Rights: © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved.
metadata.item.grantfulltext: none
metadata.item.fulltext: No Fulltext
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