Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90326
Title: Influence of Cr doping on Schottky barrier height and visible light detection of ZnO thin films deposited by magnetron sputtering
Authors: Fareed, S.
Jamil, Arifa
Tiwari, Naveen
Rafiq, M. A.
Keywords: Science::Chemistry
Thin Films
Chromium-doped Zinc Oxide
Issue Date: 2019
Source: Fareed, S., Jamil, A., Tiwari, N., & Rafiq, M. A. (2019). Influence of Cr doping on Schottky barrier height and visible light detection of ZnO thin films deposited by magnetron sputtering. Micro and Nano Engineering, 2, 48-52. doi:10.1016/j.mne.2018.12.003
Series/Report no.: Micro and Nano Engineering
Abstract: A comparative study of the electrical and photodetection properties of ZnO and Cr doped ZnO thin films are being reported here. The films were deposited using magnetron sputtering. X-ray diffraction (XRD) revealed hexagonal crystal structure of the films with (002) preferred orientation. Pt/ZnO/Pt and Pt/Cr doped ZnO/Pt Schottky diodes were fabricated for photodetection studies. The Schottky barrier height was lowered for Cr doped ZnO film as compared to ZnO film. The ideality factor was improved upon Cr doping. Pt/ZnO/Pt diode was unresponsive to visible light, however, Pt/Cr doped ZnO/Pt diode showed response to visible light with short response and recovery times. The response of the Pt/Cr doped ZnO/Pt diodes to visible light is attributed to the reduction in band gap of the Cr doped ZnO thin film.
URI: https://hdl.handle.net/10356/90326
http://hdl.handle.net/10220/49441
DOI: http://dx.doi.org/10.1016/j.mne.2018.12.003
Rights: © 2018 The Author(s). Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:ERI@N Journal Articles

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