Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/105701
Title: The integration of InGaP LEDs with CMOS on 200 mm silicon wafers
Authors: Wang, Bing
Lee, Kwang Hong
Wang, Cong
Wang, Yue
Made, Riko I.
Sasangka, Wardhana Aji
Nguyen, Viet Cuong
Lee, Kenneth Eng Kian
Tan, Chuan Seng
Yoon, Soon Fatt
Fitzgerald, Eugene A.
Michel, Jurgen
Keywords: Engineering::Electrical and electronic engineering
InGaP LED
CMOS Integration
Issue Date: 2017
Source: Wang, B., Lee, K. H., Wang, C., Wang, Y., Made, R. I., Sasangka, W. A., . . . Michel, J. (2017). The integration of InGaP LEDs with CMOS on 200 mm silicon wafers. Proceedings of SPIE - Smart Photonic and Optoelectronic Integrated Circuits XIX, 10107, 101070Y-. doi:10.1117/12.2252030
Series/Report no.: Proceedings of SPIE - Smart Photonic and Optoelectronic Integrated Circuits XIX
Abstract: The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.
URI: https://hdl.handle.net/10356/105701
http://hdl.handle.net/10220/49553
DOI: 10.1117/12.2252030
Rights: © 2017 SPIE. All rights reserved. This paper was published in Proceedings of SPIE - Smart Photonic and Optoelectronic Integrated Circuits XIX and is made available with permission of SPIE.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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