Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/106411
Title: High-speed photo detection at two-micron-wavelength : technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate
Authors: Xu, Shengqiang
Wang, Wei
Huang, Yi-Chiau
Dong, Yuan
Masudy-Panah, Saeid
Wang, Hong
Gong, Xiao
Yeo, Yee-Chia
Keywords: Diode Lasers
Optical Devices and Detectors
Engineering::Electrical and electronic engineering
Issue Date: 2019
Source: Xu, S., Wang, W., Huang, Y.-C., Dong, Y., Masudy-Panah, S., Wang, H., . . . Yeo, Y.-C. (2019). High-speed photo detection at two-micron-wavelength : technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate. Optics Express, 27(4), 5798-5813. doi:10.1364/OE.27.005798
Series/Report no.: Optics Express
Abstract: We report high-speed photo detection at two-micron-wavelength achieved by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode, exhibiting a 3-dB bandwidth (f3-dB) above 10 GHz for the first time. The epitaxy of device layer stacks was performed on a standard (001)-oriented 300 mm Si substrate by using reduced pressure chemical vapor deposition (RPCVD). The results showed promise for large-scale manufacturing. To our knowledge, this is also the first photodiodes-on-Si with direct radio-frequency (RF) measurement to quantitatively confirm high-speed functionality with tens of GHz f3-dB at 2 µm, which is considered as a promising candidate for the next data communication window. This work illustrates the potential for using GeSn to extend the utility of Si photonics in 2 µm band integrated optical transceivers for communication applications.
URI: https://hdl.handle.net/10356/106411
http://hdl.handle.net/10220/49622
ISSN: 1094-4087
DOI: 10.1364/OE.27.005798
Rights: © 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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